As a part of IEEE Electron Devices Society’s ongoing FET100 – Centennial Celebrations of FET, KARE IEEE Electron Devices Society has organized a Distinguished Lecture on “Tunnel Field Effect Transistor: A Viable Option for Ultra-Sensitive Biosensing Applications”, delivered by Prof. Manoj Saxena, IEEE EDS Distinguished Lecturer, Chairman, IEEE EDS Delhi Chapter and Chair, EDS Community Engagement Ad HoC Committee.

The day began with an engaging morning interaction with IEEE student members from KARE IEEE Electron Devices Society, KARE IEEE Solid-State Circuits Society, IEEE SPS KARE, and KARE IEEE Photonics, where he shared valuable insights on IEEE Resources, global collaboration, and the vast opportunities available through IEEE and the IEEE Electron Devices Society.

In the afternoon session, he unveiled the KARE IEEE Electron Devices Society flag and under the FET100 Centennial Initiatives, he delivered a Distinguished Lecture on “Tunnel Field Effect Transistor: A Viable Option for Ultra-Sensitive Biosensing Applications.”

In his lecture, he traced the evolution of the Field Effect Transistor from its early developments to advanced non-classical devices, highlighting how scaling challenges led to innovative architectures like TFETs. He then presented his work on TFET-based biomedical sensing, particularly focusing on ultra-sensitive detection mechanisms for ovarian cancer – demonstrating how device physics can directly contribute to life-saving diagnostics.